4
5909.43р.
Collector-Emitter Breakdown Voltage (Vces)
1.7kVCurrent - Collector(Ic)
160ACollector-Emitter Breakdown Voltage (Vces)
1.7kV
Current - Collector(Ic)
160A
ECCN
EAR99
Gate Charge(Qg)
425nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3V@8mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
NPT (Non-Punch Through)
Input Capacitance(Cies)
9.22nF@25V
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃@(Tj)
Output Capacitance(Coes)
455pF
Package
SOT-227B
Pd - Power Dissipation
735W
Reverse Transfer Capacitance (Cres)
150pF
Sales Unit
Piece
Standard Packaging
10
Td(off)
285ns
Td(on)
35ns
Vce Saturation(VCE(sat))
3V@100A,15V
Габариты и вес
Отзывов: 0
Нет отзывов об этом товаре.
Вопросов: 0
Нет вопросов об этом товаре.
Похожие товары
