2
3518.20р.
Collector-Emitter Breakdown Voltage (Vces)
650VCurrent - Collector(Ic)
160ACollector-Emitter Breakdown Voltage (Vces)
650V
Current - Collector(Ic)
160A
ECCN
EAR99
Gate Charge(Qg)
172nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
2.3V@15V,70A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
PT (Punch-Through)
Minimum
1
Multiple
1
Operating temperature
-55℃~+175℃@(Tj)
Output Capacitance(Coes)
475pF
Package
SOT-227B
Pd - Power Dissipation
600W
Pulsed Current- Forward(Ifm)
50A
Reverse Recovery Time(trr)
95ns
Reverse Transfer Capacitance (Cres)
102pF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
830uJ
Td(off)
107ns
Td(on)
23ns
Turn-On Energy (Eon)
1.3mJ
Vce Saturation(VCE(sat))
2.3V@70A,15V
Габариты и вес
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