25
311.00р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVGate Charge(Qg)
340nC@15VCollector-Emitter Breakdown Voltage (Vces)
1.2kV
Gate Charge(Qg)
340nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.5V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
NPT (Non-Punch Through)
Input Capacitance(Cies)
360pF
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃
Output Capacitance(Coes)
218pF
Package
TO-264
Pd - Power Dissipation
500W
Pulsed Current- Forward(Ifm)
150A
Reverse Recovery Time(trr)
292ns
Reverse Transfer Capacitance (Cres)
218pF
Sales Unit
Piece
Standard Packaging
24
Switching Energy(Eoff)
6.58mJ
Td(off)
55ns
Td(on)
95ns
Turn-On Energy (Eon)
3.16mJ
Габариты и вес
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