91
193.40р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVGate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@250uACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
NPT (Non-Punch Through)
Input Capacitance(Cies)
1.6nF
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃
Output Capacitance(Coes)
270pF
Package
TO-247
Pd - Power Dissipation
200W
Pulsed Current- Forward(Ifm)
100A
Reverse Recovery Time(trr)
210ns
Reverse Transfer Capacitance (Cres)
170pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
2.33mJ
Td(off)
300ns
Td(on)
25ns
Turn-On Energy (Eon)
1.62mJ
Габариты и вес
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