20
149.75р.
Category
Discrete Semiconductors/IGBTs/Single IGBTsCollector-Emitter Breakdown Voltage (Vces)
650VCategory
Discrete Semiconductors/IGBTs/Single IGBTs
Collector-Emitter Breakdown Voltage (Vces)
650V
ECCN
EAR99
Gate Charge(Qg)
13.5nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5V@2.8mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
Input Capacitance(Cies)
220pF
Manufacturer
ROHM
Minimum
1
Multiple
1
Operating temperature
-40℃~+175℃@(Tj)
Output Capacitance(Coes)
14pF
Package
TO-263-3
Pd - Power Dissipation
65W
Pulsed Current- Forward(Ifm)
12A
Reverse Recovery Time(trr)
40ns
Reverse Transfer Capacitance (Cres)
4.5pF
Sales Unit
Piece
Standard Packaging
1000
Td(off)
69ns
Td(on)
17ns
Габариты и вес
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