90
704.74р.
Collector-Emitter Breakdown Voltage (Vces)
650VGate Charge(Qg)
140nC@15VCollector-Emitter Breakdown Voltage (Vces)
650V
Gate Charge(Qg)
140nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3.5V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.65nF
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃
Output Capacitance(Coes)
320pF
Package
TO-247
Pd - Power Dissipation
625W
Pulsed Current- Forward(Ifm)
300A
Reverse Recovery Time(trr)
49ns
Reverse Transfer Capacitance (Cres)
63pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
1.5mJ
Td(off)
95ns
Td(on)
26ns
Turn-On Energy (Eon)
2.8mJ
Габариты и вес
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