30
105.41р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVGate Charge(Qg)
160nC@15VCollector-Emitter Breakdown Voltage (Vces)
1.2kV
Gate Charge(Qg)
160nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
4.67nF
Minimum
1
Multiple
1
Output Capacitance(Coes)
232pF
Package
TO-263
Pd - Power Dissipation
227W
Pulsed Current- Forward(Ifm)
120A
Reverse Recovery Time(trr)
240ns
Reverse Transfer Capacitance (Cres)
100pF
Sales Unit
Piece
Standard Packaging
800
Switching Energy(Eoff)
1.5mJ
Td(off)
230ns
Td(on)
100ns
Turn-On Energy (Eon)
2.4mJ
Габариты и вес
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