30
299.50р.
Collector-Emitter Breakdown Voltage (Vces)
650VGate Charge(Qg)
340nC@15VCollector-Emitter Breakdown Voltage (Vces)
650V
Gate Charge(Qg)
340nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.85nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+175℃
Output Capacitance(Coes)
410pF
Package
TO-247
Pd - Power Dissipation
750W
Pulsed Current- Forward(Ifm)
300A
Reverse Recovery Time(trr)
80ns
Reverse Transfer Capacitance (Cres)
185pF
Sales Unit
Piece
Standard Packaging
450
Switching Energy(Eoff)
2.45mJ
Td(off)
267ns
Td(on)
38ns
Turn-On Energy (Eon)
4.65mJ
Габариты и вес
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