10
560.16р.
Category
Discrete Semiconductors/IGBTs/Single IGBTsCollector-Emitter Breakdown Voltage (Vces)
1.2kVCategory
Discrete Semiconductors/IGBTs/Single IGBTs
Collector-Emitter Breakdown Voltage (Vces)
1.2kV
ECCN
EAR99
Gate Charge(Qg)
69nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3.3V@15V,30A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
Input Capacitance(Cies)
1.64nF
Manufacturer
Littelfuse/IXYS
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃@(Tj)
Output Capacitance(Coes)
140pF
Package
TO-247
Pd - Power Dissipation
416W
Reverse Recovery Time(trr)
195ns
Reverse Transfer Capacitance (Cres)
38pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
1.1mJ
Td(off)
130ns
Td(on)
19ns
Turn-On Energy (Eon)
2.6mJ
Габариты и вес
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