25
6627.75р.
Category
Discrete Semiconductors/IGBTs/Single IGBTsCollector-Emitter Breakdown Voltage (Vces)
2.5kVCategory
Discrete Semiconductors/IGBTs/Single IGBTs
Collector-Emitter Breakdown Voltage (Vces)
2.5kV
ECCN
EAR99
Gate Charge(Qg)
75nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@15V,75A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
NPT (Non-Punch Through)
Manufacturer
Littelfuse/IXYS
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃@(Tj)
Pd - Power Dissipation
114W
Sales Unit
Piece
Standard Packaging
25
Габариты и вес
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