138
4493.38р.
Category
Discrete Semiconductors/IGBTs/Single IGBTsCollector-Emitter Breakdown Voltage (Vces)
2.5kVCategory
Discrete Semiconductors/IGBTs/Single IGBTs
Collector-Emitter Breakdown Voltage (Vces)
2.5kV
ECCN
EAR99
Gate Charge(Qg)
200nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3V@1mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
Manufacturer
Littelfuse/IXYS
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃@(Tj)
Output Capacitance(Coes)
170pF
Package
TO-247AD
Pd - Power Dissipation
500W
Reverse Recovery Time(trr)
1.7us
Reverse Transfer Capacitance (Cres)
56pF
Sales Unit
Piece
Standard Packaging
30
Td(off)
445ns
Td(on)
72ns
Габариты и вес
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