Collector-Emitter Breakdown Voltage (Vces)
650V
ECCN
EAR99
Gate Charge(Qg)
180nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.8nF@30V
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Output Capacitance(Coes)
116pF
Package
TO-247-3
Pd - Power Dissipation
260W
Pulsed Current- Forward(Ifm)
200A
Reverse Recovery Time(trr)
90ns
Reverse Transfer Capacitance (Cres)
96pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
1.1mJ
Td(off)
180ns
Td(on)
40ns
Turn-On Energy (Eon)
1.9mJ
Габариты и вес
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