Collector-Emitter Breakdown Voltage (Vces)
650V
ECCN
EAR99
Gate Charge(Qg)
17nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.8V@0.12mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
480pF
Minimum
1
Multiple
1
Operating temperature
-40℃~+175℃
Output Capacitance(Coes)
29pF
Package
TO-220-3
Pd - Power Dissipation
33W
Pulsed Current- Forward(Ifm)
25A
Reverse Recovery Time(trr)
43ns
Reverse Transfer Capacitance (Cres)
8pF
Sales Unit
Piece
Standard Packaging
50
Switching Energy(Eoff)
40uJ
Td(off)
59ns
Td(on)
20ns
Turn-On Energy (Eon)
110uJ
Габариты и вес
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