11
1177.99р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVGate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@1.7mACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@1.7mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
3.6nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+175℃
Pd - Power Dissipation
200W
Pulsed Current- Forward(Ifm)
100A
Reverse Transfer Capacitance (Cres)
0.14nF
Sales Unit
Piece
Standard Packaging
18
Switching Energy(Eoff)
3mJ
Td(off)
230ns
Td(on)
40ns
Turn-On Energy (Eon)
2mJ
Габариты и вес
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