98
109.06р.
Collector-Emitter Breakdown Voltage (Vces)
650VGate Charge(Qg)
97nC@15VCollector-Emitter Breakdown Voltage (Vces)
650V
Gate Charge(Qg)
97nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3.5V@0.25mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.805nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+175℃
Output Capacitance(Coes)
119pF
Package
TO-3PN
Pd - Power Dissipation
250W
Pulsed Current- Forward(Ifm)
60A
Reverse Recovery Time(trr)
60ns
Reverse Transfer Capacitance (Cres)
17pF
Sales Unit
Piece
Standard Packaging
25
Switching Energy(Eoff)
720uJ
Td(off)
200ns
Td(on)
54ns
Turn-On Energy (Eon)
1.8mJ
Габариты и вес
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