3
2259.86р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVGate Charge(Qg)
0.44uCCollector-Emitter Breakdown Voltage (Vces)
1.2kV
Gate Charge(Qg)
0.44uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5V@0.25mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
IGBT Module
Input Capacitance(Cies)
6.15nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
EasyPIM2B
Pd - Power Dissipation
180W
Pulsed Current- Forward(Ifm)
70A
Reverse Transfer Capacitance (Cres)
0.08nF
Sales Unit
Piece
Standard Packaging
20
Switching Energy(Eoff)
2.324mJ
Td(off)
110ns
Td(on)
27ns
Turn-On Energy (Eon)
2.373mJ
Габариты и вес
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