119
161.91р.
Collector-Emitter Breakdown Voltage (Vces)
650VGate Charge(Qg)
93nC@15VCollector-Emitter Breakdown Voltage (Vces)
650V
Gate Charge(Qg)
93nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.035nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Output Capacitance(Coes)
82pF
Package
TO-263-2L
Pd - Power Dissipation
188W
Pulsed Current- Forward(Ifm)
120A
Reverse Recovery Time(trr)
95ns
Reverse Transfer Capacitance (Cres)
37pF
Sales Unit
Piece
Standard Packaging
800
Switching Energy(Eoff)
880uJ
Td(off)
169ns
Td(on)
37ns
Turn-On Energy (Eon)
1.52mJ
Габариты и вес
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