2
6035.21р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
281ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
281A
ECCN
EAR99
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.75V@5.7mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
9.35nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Pd - Power Dissipation
1.087kW
Pulsed Current- Forward(Ifm)
185A
Reverse Recovery Time(trr)
163ns
Reverse Transfer Capacitance (Cres)
350pF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
7.3mJ
Td(off)
334ns
Td(on)
192ns
Turn-On Energy (Eon)
4.4mJ
Vce Saturation(VCE(sat))
2.05V@100A,15V
Габариты и вес
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