43
12322.64р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
370ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
370A
ECCN
EAR99
Gate Charge(Qg)
3.2uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.5V@12.0mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
IGBT Module
Minimum
1
Multiple
1
Operating temperature
-40℃~+125℃
Package
Screw Terminals
Pd - Power Dissipation
1.95kW
Pulsed Current- Forward(Ifm)
600A
Reverse Transfer Capacitance (Cres)
1.4nF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
15mJ
Td(off)
530ns
Td(on)
100ns
Turn-On Energy (Eon)
25mJ
Vce Saturation(VCE(sat))
3.85V@300A,15V
Габариты и вес
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