7
5624.21р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
150ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
150A
ECCN
EAR99
Gate Charge(Qg)
1.25uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.8V@5.3mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
9.35nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
Through Hole,122x62mm
Pd - Power Dissipation
750W
Pulsed Current- Forward(Ifm)
300A
Reverse Transfer Capacitance (Cres)
0.35nF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
10mJ
Td(off)
370ns
Td(on)
115ns
Turn-On Energy (Eon)
5mJ
Vce Saturation(VCE(sat))
2.1V@150A,15V
Габариты и вес
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