3
9934.91р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
275ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
275A
ECCN
EAR99
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.5V@8mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
IGBT Module
Minimum
1
Multiple
1
Operating temperature
-40℃~+125℃
Package
Screw Terminals
Pd - Power Dissipation
1.4kW
Pulsed Current- Forward(Ifm)
400A
Reverse Transfer Capacitance (Cres)
0.85nF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
12mJ
Td(off)
530ns
Td(on)
100ns
Turn-On Energy (Eon)
19mJ
Vce Saturation(VCE(sat))
3.85V@200A,15V
Габариты и вес
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