10
13415.46р.
Category
Discrete Semiconductors/IGBTs/Single IGBTsCollector-Emitter Breakdown Voltage (Vces)
1.7kVCategory
Discrete Semiconductors/IGBTs/Single IGBTs
Collector-Emitter Breakdown Voltage (Vces)
1.7kV
Current - Collector(Ic)
840A
ECCN
EAR99
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@24mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
54nF@25V
Manufacturer
Infineon
Minimum
1
Multiple
1
Operating temperature
-40℃~+125℃@(Tj)
Pd - Power Dissipation
3.15kW
Pulsed Current- Forward(Ifm)
1200A
Reverse Transfer Capacitance (Cres)
1.7nF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
130mJ
Td(off)
800ns
Td(on)
280ns
Turn-On Energy (Eon)
140mJ
Vce Saturation(VCE(sat))
2.45V@600A,15V
Габариты и вес
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