10
5959.86р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
75ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
75A
ECCN
EAR99
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@2.4mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
4.3nF@25V
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
Through Hole,107.5x45mm
Pd - Power Dissipation
385W
Sales Unit
Piece
Standard Packaging
15
Switching Energy(Eoff)
3.9mJ
Td(off)
300ns
Td(on)
130ns
Turn-On Energy (Eon)
4.7mJ
Vce Saturation(VCE(sat))
2.25V@75A,15V
Габариты и вес
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