6
4197.11р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
35ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
35A
ECCN
EAR99
Gate Charge(Qg)
0.27uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@1.2mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
Through Hole,62.8x56.7mm
Pd - Power Dissipation
215W
Reverse Transfer Capacitance (Cres)
0.07nF
Sales Unit
Piece
Standard Packaging
15
Switching Energy(Eoff)
2mJ
Td(off)
240ns
Td(on)
25ns
Turn-On Energy (Eon)
1.9mJ
Vce Saturation(VCE(sat))
1.85V@35A,15V
Габариты и вес
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