2
4208.73р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
40ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
40A
ECCN
EAR99
Gate Charge(Qg)
0.24uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5V@1mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
IGBT Module
Input Capacitance(Cies)
1.8nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+125℃@(Tj)
Package
Through Hole,107.5x45mm
Pd - Power Dissipation
155W
Pulsed Current- Forward(Ifm)
50A
Reverse Transfer Capacitance (Cres)
0.064nF
Sales Unit
Piece
Standard Packaging
15
Switching Energy(Eoff)
1.8mJ
Td(off)
420ns
Td(on)
90ns
Turn-On Energy (Eon)
2.4mJ
Vce Saturation(VCE(sat))
2.15V@25A,15V
Габариты и вес
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