5
5174.57р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
100ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
100A
ECCN
EAR99
Gate Charge(Qg)
1.8uC@600V,15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
1.5V@15V,100A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
21.7nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+175℃@(Tj)
Package
Through Hole,107.5x45mm
Pd - Power Dissipation
20mW
Pulsed Current- Forward(Ifm)
200A
Reverse Transfer Capacitance (Cres)
0.076nF
Sales Unit
Piece
Standard Packaging
15
Switching Energy(Eoff)
6.42mJ
Td(off)
324ns
Td(on)
171ns
Turn-On Energy (Eon)
10.4mJ
Vce Saturation(VCE(sat))
1.72V@100A,15V
Габариты и вес
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