2
9586.41р.
Collector-Emitter Breakdown Voltage (Vces)
650VCurrent - Collector(Ic)
400ACollector-Emitter Breakdown Voltage (Vces)
650V
Current - Collector(Ic)
400A
ECCN
EAR99
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
1.95V@15V,400A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
26nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Pd - Power Dissipation
1.25kW
Pulsed Current- Forward(Ifm)
800A
Reverse Transfer Capacitance (Cres)
0.76nF
Sales Unit
Piece
Standard Packaging
10
Switching Energy(Eoff)
16mJ
Td(off)
400ns
Td(on)
110ns
Turn-On Energy (Eon)
2.1mJ
Vce Saturation(VCE(sat))
1.95V@400A,15V
Габариты и вес
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