320
7.36р.
Category
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETsCiss-Input Capacitance
835pFCategory
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Ciss-Input Capacitance
835pF
Current - Continuous Drain(Id)
4A
Drain to Source Voltage
20V
ECCN
EAR99
Gate Charge(Qg)
10nC@4.5V
Gate Threshold Voltage (Vgs(th))
1.5V
HTS_BR
85412910
HTS_CA
8541290000
HTS_CN
8541290000
HTS_IN
85412900
HTS_MX
8541.29.99
HTS_TARIC
8541290000
HTS_US
8541290095
Manufacturer
VBsemi Elec
Minimum
10
Multiple
10
Number
1 P-Channel
Operating Temperature -
-55℃~+150℃
Output Capacitance(Coss)
180pF
Package
SOT-23(TO-236)
Pd - Power Dissipation
2.5W
RDS(on)
60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)
155pF
Sales Unit
Piece
Standard Packaging
3000
type
P-Channel
Габариты и вес
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