50
771.36р.
Category
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETsCiss-Input Capacitance
4.975nFCategory
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Ciss-Input Capacitance
4.975nF
Current - Continuous Drain(Id)
32A
Drain to Source Voltage
650V
ECCN
EAR99
Gate Charge(Qg)
102nC@10V
Gate Threshold Voltage (Vgs(th))
3.5V
HTS_BR
85412910
HTS_CA
8541290000
HTS_CN
8541290000
HTS_IN
85412900
HTS_MX
8541.29.99
HTS_TARIC
8541290000
HTS_US
8541290095
Manufacturer
Infineon
Minimum
1
Multiple
1
Number
1 N-channel
Operating Temperature -
-55℃~+150℃
Package
TO-220-3
Pd - Power Dissipation
227W
RDS(on)
41mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)
1.825nF
Sales Unit
Piece
Standard Packaging
50
Габариты и вес
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