2
8136.05р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVGate-Emitter Threshold Voltage (Vge(th)@Ic)
5.9V@17mACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.9V@17mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
133nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
E3
Pd - Power Dissipation
2.08kW
Pulsed Current- Forward(Ifm)
900A
Reverse Recovery Time(trr)
230ns
Reverse Transfer Capacitance (Cres)
1.5nF
Sales Unit
Piece
Standard Packaging
6
Switching Energy(Eoff)
39mJ
Td(off)
510ns
Td(on)
370ns
Turn-On Energy (Eon)
52mJ
Габариты и вес
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