Collector-Emitter Breakdown Voltage (Vces)
600V
ECCN
EAR99
Gate Charge(Qg)
110nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
1.35V@15V,32A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
PT (Punch-Through)
Input Capacitance(Cies)
3.19nF
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃@(Tj)
Output Capacitance(Coes)
175pF
Package
TO-263(D2PAK)
Pd - Power Dissipation
300W
Reverse Recovery Time(trr)
30ns
Reverse Transfer Capacitance (Cres)
43pF
Sales Unit
Piece
Standard Packaging
800
Switching Energy(Eoff)
2.9mJ
Td(off)
334ns
Td(on)
25ns
Turn-On Energy (Eon)
950uJ
Габариты и вес
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