4
442.78р.
Collector-Emitter Breakdown Voltage (Vces)
650VGate Charge(Qg)
260nC@15VCollector-Emitter Breakdown Voltage (Vces)
650V
Gate Charge(Qg)
260nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.6V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
4.5nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Output Capacitance(Coes)
200pF
Package
TO-247-3
Pd - Power Dissipation
416W
Reverse Recovery Time(trr)
75ns
Reverse Transfer Capacitance (Cres)
100pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
8.4mJ
Td(off)
660ns
Td(on)
110ns
Turn-On Energy (Eon)
4.3mJ
Габариты и вес
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