Collector-Emitter Breakdown Voltage (Vces)
1.2kV
ECCN
EAR99
Gate Charge(Qg)
220nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3.5V@250uA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
NPT (Non-Punch Through)
Input Capacitance(Cies)
3.2nF
Minimum
1
Multiple
1
Operating temperature
-55℃~+150℃@(Tj)
Output Capacitance(Coes)
370pF
Package
TO-264-3
Pd - Power Dissipation
500W
Pulsed Current- Forward(Ifm)
240A
Reverse Recovery Time(trr)
75ns
Reverse Transfer Capacitance (Cres)
125pF
Sales Unit
Piece
Standard Packaging
25
Switching Energy(Eoff)
1.1mJ
Td(off)
110ns
Td(on)
15ns
Turn-On Energy (Eon)
2.3mJ
Габариты и вес
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