Collector-Emitter Breakdown Voltage (Vces)
650V
ECCN
EAR99
Gate Charge(Qg)
149nC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
3V@75mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
4.954nF
Minimum
1
Multiple
1
Operating temperature
-55℃~+175℃@(Tj)
Output Capacitance(Coes)
163pF
Package
TO-247-4LD
Pd - Power Dissipation
375W
Pulsed Current- Forward(Ifm)
300A
Reverse Recovery Time(trr)
107ns
Reverse Transfer Capacitance (Cres)
14pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
1.1mJ
Td(off)
181ns
Td(on)
32ns
Turn-On Energy (Eon)
1.2mJ
Габариты и вес
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