501
117.96р.
Collector-Emitter Breakdown Voltage (Vces)
650VGate Charge(Qg)
165nC@15VCollector-Emitter Breakdown Voltage (Vces)
650V
Gate Charge(Qg)
165nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@1mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.758nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Output Capacitance(Coes)
170pF
Package
TO-3PN
Pd - Power Dissipation
280W
Pulsed Current- Forward(Ifm)
100A
Reverse Recovery Time(trr)
52ns
Reverse Transfer Capacitance (Cres)
88pF
Sales Unit
Piece
Standard Packaging
25
Switching Energy(Eoff)
970uJ
Td(off)
218ns
Td(on)
42ns
Turn-On Energy (Eon)
1.67mJ
Габариты и вес
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