Collector-Emitter Breakdown Voltage (Vces)
650V
ECCN
EAR99
Gate Charge(Qg)
84nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.1V@60mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
2.419nF
Minimum
1
Multiple
1
Operating temperature
-55℃~+175℃
Output Capacitance(Coes)
82pF
Package
TO-3PN
Pd - Power Dissipation
306W
Pulsed Current- Forward(Ifm)
120A
Reverse Recovery Time(trr)
110ns
Reverse Transfer Capacitance (Cres)
31pF
Sales Unit
Piece
Standard Packaging
30
Switching Energy(Eoff)
520uJ
Td(off)
71ns
Td(on)
25.6ns
Turn-On Energy (Eon)
2.46mJ
Габариты и вес
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