35
3744.05р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
39ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
39A
ECCN
EAR99
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.2V@0.8mA
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
IGBT Module
Input Capacitance(Cies)
1.45nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
Through Hole,62.8x56.7mm
Pd - Power Dissipation
175W
Pulsed Current- Forward(Ifm)
50A
Reverse Transfer Capacitance (Cres)
0.05nF
Sales Unit
Piece
Standard Packaging
15
Switching Energy(Eoff)
1.45mJ
Td(off)
190ns
Td(on)
26ns
Turn-On Energy (Eon)
1.6mJ
Vce Saturation(VCE(sat))
2.25V@25A,15V
Габариты и вес
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