3
43377.57р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
675ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
675A
ECCN
EAR99
Gate Charge(Qg)
3.3uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
2.1V@15V,450A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
28nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃
Package
Through Hole,162x150mm
Pd - Power Dissipation
2.25kW
Pulsed Current- Forward(Ifm)
900A
Reverse Transfer Capacitance (Cres)
1.55nF
Sales Unit
Piece
Standard Packaging
4
Switching Energy(Eoff)
38mJ
Td(off)
490ns
Td(on)
190ns
Turn-On Energy (Eon)
15mJ
Vce Saturation(VCE(sat))
2.05V@450A,15V
Габариты и вес
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