13
3976.29р.
Collector-Emitter Breakdown Voltage (Vces)
1.2kVCurrent - Collector(Ic)
25ACollector-Emitter Breakdown Voltage (Vces)
1.2kV
Current - Collector(Ic)
25A
ECCN
EAR99
Gate Charge(Qg)
0.2uC
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
2.15V@15V,25A
HTS_BR
85416010
HTS_CA
8541600010
HTS_CN
8541600000
HTS_IN
85416000
HTS_MX
8541.60.01
HTS_TARIC
8541600000
HTS_US
8541600080
IGBT Type
FS (Field Stop)
Input Capacitance(Cies)
1.45nF
Minimum
1
Multiple
1
Operating temperature
-40℃~+150℃@(Tj)
Package
Through Hole,107.5x45mm
Pd - Power Dissipation
160W
Pulsed Current- Forward(Ifm)
50A
Reverse Transfer Capacitance (Cres)
0.05nF
Sales Unit
Piece
Standard Packaging
15
Switching Energy(Eoff)
1.4mJ
Td(off)
330ns
Td(on)
160ns
Turn-On Energy (Eon)
1.8mJ
Vce Saturation(VCE(sat))
2.15V@25A,15V
Габариты и вес
Отзывов: 0
Нет отзывов об этом товаре.
Вопросов: 0
Нет вопросов об этом товаре.
Похожие товары
