57
70.22р.
Category
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETsCiss-Input Capacitance
4.23nFCategory
Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs
Ciss-Input Capacitance
4.23nF
Current - Continuous Drain(Id)
36A
Drain to Source Voltage
40V
ECCN
EAR99
Gate Charge(Qg)
32.5nC@10V
Gate Threshold Voltage (Vgs(th))
1V;2.5V
HTS_BR
85412910
HTS_CA
8541290000
HTS_CN
8541290000
HTS_IN
85412900
HTS_MX
8541.29.99
HTS_TARIC
8541290000
HTS_US
8541290095
Manufacturer
VBsemi Elec
Minimum
1
Multiple
1
Number
1 N-channel
Operating Temperature -
-55℃~+150℃
Package
SO-8
Pd - Power Dissipation
7.8W
RDS(on)
2mΩ@10V;3mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)
220pF
Sales Unit
Piece
Standard Packaging
4000
type
N-Channel
Габариты и вес
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